高纯碲：99.999% Te-5N-L-1
检测杂质：Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Sn, Si
杂质总含量：≤10ppm
高纯碲：99.9999% Te-6N-L-2
检测杂质：Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Zn, Ca
杂质总含量：≤1ppm
高纯碲：99.99999% Te-7N-L-3
检测杂质：Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Zn, Ca
杂质总含量：≤0.1ppm
用途：主要用于制备Ⅱ-Ⅵ族化合物半导体、热点转换元件、致冷元件、压电晶体和红外探测器，太阳能
电池材料等。
包装：涤纶薄膜包装后双层复合膜抽真空包装两次，{外套复合铝箔内充氩气封装}或者直接玻璃管真空封装。
Specification:
High purity Te: 99.999% Te-5N-L-1
Testing impurity: Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Sn, Si
Totalimpurity content: ≤10ppm
High purity Te: 99.9999% Te-6N-L-2
Testing impurity: Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Zn, Ca
Totalimpurity content: ≤1ppm
High purity Te: 99.99999% Te-7N-L-3
Testing impurity: Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Zn, Ca
Totalimpurity content: ≤0.1ppm
Application: Use for preparation Ⅱ-Ⅵ elementschemical compound semiconductor, thermo-electricity transfer cell,refrigerating cell, piezoelectric crystal and infrared detector. Used as thematerial of solar cell etc…
Package: Packed with terylene film, and doublepoly-film with vacuum encapsulation, do this twice, then packed with aluminumfoil with argon encapsulation, or packed with glass tube with vacuumencapsulation directly.
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湖北 - 武汉
2024年12月27日 ~ 29日
